Kumar, Praveen and Kumar, Mahesh and Shivaprasad, S. M. (2012) Ga induced 2D superstructural phase diagram on trenched Si(5512) surface. Surface Science, 606 (13-14). pp. 1045-1049. ISSN 0039-6028

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The high index Si(5 5 12) surface offers morphological trenches, which can be interesting for epitaxial growth. In this study, the evolution of Ga adsorption at a very low flux rate of 0.03 ML/min on high index trenched Si(5 5 12) - 2 x 1 reconstructed surface at various substrate temperatures ranging from room temperature (RT) to 600 degrees C has been investigated using in-situ AES, LEED and EELS. The Auger uptake curves, which plot the Ga(LMM)/Si(LVV) Auger intensity ratio with Ga adsorption time, show that Ga grows in layer plus islands mode for substrate temperatures in the RT to 350 degrees C range, while it grows in Volmer-Weber (3D islands) for higher substrate temperatures (>350 degrees C). We also arrive at a complete 2D superstructural phase diagram for Ga/Si (5 5 12) interfacial system that shows the pathways to attain the different superstructural phases. The formation of Ga nanowires as (2 2 5),(3 3 7) phase and Ga 3D islands in the (1 1 2) - 6 x 1, (1 1 2) - 6 x 2 phases and other Ga induced superstructural phases like (7 7 17) + 2x(1 1 3), (2 2 5) + (3 3 7), 1 x 1 has been carefully followed. The electronic structures of each of the observed phases have been probed by EELS and each of them is shown to have characteristic features.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier.
Subjects: Applied Physics/Condensed Matter
Physical Chemistry/Chemical Physics
Depositing User: Users 27 not found.
Date Deposited: 12 Mar 2020 10:49
Last Modified: 12 Mar 2020 10:49
URI: http://npl.csircentral.net/id/eprint/3561

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