Vanchinathan, K. and Muthu, K. and Bhagavannarayana, G. and Meenakshisundaram, S. P. (2012) Growth of cerium(III)-doped ADP crystals and characterization studies. Journal of Crystal Growth, 354 (1). pp. 57-61. ISSN 0022-0248

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Abstract

Single crystals of Ce(III)-doped ammonium dihydrogen phosphate (ADP) are grown by conventional slow evaporation of aqueous solution and Sankaranarayanan-Ramasamy (SR) technique. High-resolution X-ray diffraction (HRXRD) studies reveal that the crystalline perfection is substantially better in the case of SR-grown crystal. Morphological changes are observed in the doped specimen. Doping has some influence on the DRS spectra and the band gap energy is estimated by Kubelka-Munk algorithm. Lattice parameters are determined by single crystal XRD analysis. The powder X-ray diffraction and FT-IR analyses indicate that the crystal undergoes considerable stress as a result of doping. The incorporation of Ce(III) into the crystalline matrix of ADP is confirmed by energy dispersive X-ray spectroscopy (EDS). Thermal studies reveal no decomposition up to the melting point and no significant changes are observed as a result of foreign ion incorporation in ADP crystalline matrix.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Crystallography Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	12 Mar 2020 10:59
Last Modified:	12 Mar 2020 10:59
URI:	http://npl.csircentral.net/id/eprint/3556

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