Kumar, Sanjai and Sareen, Vikash and Batra, Neha and Singh , P. K. (2010) Study of C–V characteristics in thin n+-p-p+ silicon solar cells and induced junction n-p-p+ cell structures. Solar Energy Materials and Solar Cells , 94 (9). pp. 469-1472. ISSN 0927-0248

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Abstract

Capacitance–voltage (C–V) measurements were carried out on conventional n+-p-p+ structure based silicon solar cells (SSC) of different thicknesses (40–300 μm) and on induced junction n+-p-p+ structures (IJS) under dark at room temperature. The capacitance is determined from the best fit of the measured data. It is shown that the capacitance under reverse and forward bias condition can be divided into two distinct regions, which are correlated to the quality of the junction and effectiveness of back surface field (BSF). It is found that the IJS has shallow junction and better BSF than the conventional solar cells.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords:	Silicon solar cell; Induced structure; Impedance spectrum; Capacitance–voltage
Subjects:	Energy Fuels Materials Science
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	12 Jul 2012 09:19
Last Modified:	12 Jul 2012 09:19
URI:	http://npl.csircentral.net/id/eprint/334

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