Srivastava, M. K. and Kaur, A. and Maurya, K. K. and Awana, V. P. S. and Singh, H. K. (2013) Impact of strain on metamagnetic transitions in Sm0.5Sr0.5MnO3 thin films. Applied Physics Letters, 102 (3). 032402-032407. ISSN 0003-6951

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Sm0.5Sr0.5MnO3 thin films were deposited by DC magnetron sputtering on LaAlO3 (LAO) and SrTiO3 (STO) substrates. The film on LAO, which is under compressive strain, undergoes paramagnetic-ferromagnetic (PM-FM) transition at T-C similar to 116K and shows insulator-metal transition (IMT) at T-IM similar to 115 K. The film on STO is under tensile strain and has T-C similar to 112 K; and shows IMT at T-IM similar to 110 K. Around similar to 80 K, the film on STO shows a broad peak in the resistivity that could be seen as the reentrant IMT due to appearance of a metamagnetic state, the presence of which is confirmed by the discontinuous irreversible jumps in the magnetic field dependent isothermal resistivity at T < 85 K. These signatures of the metamagnetic state are not seen in the film on LAO. The occurrence and absence of metamagnetic state in films on STO and LAO, respectively, has been explained in terms of the control of the competing FM metallic and antiferromagnetic-charge ordered insulating (AFM-COI) phases by the different strain states in these films.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s American Institute of Physics.
Subjects: Applied Physics/Condensed Matter
Depositing User: Users 27 not found.
Date Deposited: 09 Nov 2021 09:41
Last Modified: 09 Nov 2021 09:41

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