Gope, Jhuma and Kumar, Sushil and Sudhakar, S. and Lodhi, Kalpana and Rauthan, C. M. S. and Srivastava, P. C. (2013) Influence of argon dilution on the growth of amorphous to ultra nanocrystalline silicon films using VHF PECVD process. Journal of Alloys and Compounds, 577. pp. 710-716. ISSN 0925-8388

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Abstract

Hydrogenated Silicon (Si:H) thin films were deposited by very high frequency plasma enhanced chemicalvapor deposition (VHF PECVD) technique from silane (SiH4) diluted in various argon (Ar) concentration(far). The effect of argon concentration (53–95%) on the growth and properties of Si:H films was investi-gated. Device quality amorphous silicon films were grown atfar= 53% and 63% showed photosensitivityof five orders of magnitude. Nucleation of crystallites were started atfar= 82% whereas mixed-phase ofamorphous (a-Si:H) and ultra nanocrystalline silicon thin film (ultra nc-Si:H) was grown at 87% offar.The nucleation and growth of crystallites were clearly observed in the AFM images. Raman spectrashowed the splitting and blue shift of TO mode for the films grown atfar= 82% and 87%, respectively.The variation in the hydrogen bonding configuration of these Si:H films were observed by FTIR measure-ment. The difference in the temperature dependent dark conductivity during heating and cooling runsdecreases as the fraction of clustered Si–H bond increases in the films.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Materials Science Metallurgy & Metallurgical Engineering Physical Chemistry/Chemical Physics
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	27 Jul 2020 11:51
Last Modified:	27 Jul 2020 11:51
URI:	http://npl.csircentral.net/id/eprint/3171

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