Bhattacharyya, A. and Adroja, D. T. and Hillier, A. D. and Jha, R. and Awana, V. P. S. and Strydom, A. M. (2017) Superconducting gap structure in the electron doped BiS2-based superconductor. Journal of Physics: Condensed Matter, 29 (26). 265602-1-265602-6. ISSN 0953-8984

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The influence of electron doping on semimetallic SrFBiS2 has been investigated by means of resistivity, zero and transverse - field (ZF/TF) muon spin relaxation/rotation (mu SR) experiments. SrFBiS2 is semimetallic in its normal state and small amounts of La doping results in bulk superconductivity at 2.8 K, at ambient pressure. The temperature dependence of the superfluid density as determined by TF-mu SR can be best modelled by an isotropic s - wave type superconducting gap. We have estimated the magnetic penetration depth lambda(L)(0) = 1087 nm, superconducting carrier density n(s)= 3.7x10(26) carriers m(-3) and effective-mass enhancement m* = 1.558 m(e). Additionally, there is no clear sign of the occurrence of spontaneous internal magnetic fields below T-c, which implies that the superconducting state in this material can not be categorized by the broken time-reversal symmetry which is in agreement with the previous theoretical prediction.

Item Type: Article
Additional Information: Copyright for this article belongs to M/S IOP Publishing.
Subjects: Applied Physics/Condensed Matter
Depositing User: Users 27 not found.
Date Deposited: 29 Apr 2019 07:27
Last Modified: 29 Apr 2019 07:27

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