Panwar, O. S. and Khan, Mohd Alim and Satyanarayana, B. S. and Kumar, Sushil and -, Ishpal (2010) Properties of boron and phosphorous incorporated tetrahedral amorphous carbon films grown using filtered cathodic vacuum arc process. Applied Surface Science, 256 (13). pp. 4383-4390. ISSN 0169-4332

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This paper reports the electrical, mechanical, structural and field emission properties of as grown and also boron and phosphorous incorporated tetrahedral amorphous carbon (ta-C) films, deposited using a filtered cathodic vacuum arc process. The effect of varying boron and phosphorous content (up to 2.0 at.% in to ta-C) on the conductivity (σD), activation energy (ΔE1), hardness, microstructure, emission threshold (Eturn-ON) and emission current density (J) at 12.5 V/μm of ta-C: B and ta-C: P films deposited at a high negative substrate bias of −300 V are reported. It is observed that both boron and phosphorous incorporation leads to a nearly an order increase in σD and corresponding decrease in ΔE1 and a slight increase in hardness as compared to as grown ta-C films. In the case of field assisted electron emission, it is observed that Eturn-ON increases and J decreases. The changes are attributed to the changes in the sp3/sp2 ratio of the films due to boron and phosphorous incorporation. The effect of boron on ta-C is to give a p-type effect whereas the effect of phosphorous gives n-type doping effect.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords: Conductivity; Activation energy; Field emission; ta-C: B; ta-C: P; FCVA
Subjects: Chemistry
Materials Science
Depositing User: Ms Neetu Chandra
Date Deposited: 22 Jun 2012 07:48
Last Modified: 22 Jun 2012 07:48

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