Borah, Munu and Pathak, Abhishek K. and Singh, Dilip K. and Pal, Prabir and Dhakate, Sanjay R. (2017) Role of limited hydrogen and flow interval on the growth of single crystal to continuous graphene by low-pressure chemical vapor deposition. Nanotechnology, 28 (7). 075602-1-075602-13. ISSN 0957-4484

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Abstract

A method for defect-free large crystallite graphene growth. remains unknown despite much. research effort. In this work, we. discuss the role of flow duration of H-2 gas for the production of graphene as per requirement and production. at a minimum flow rate considering the safety issue of hydrogen utilization. The copper substrate used for growth was treated for different time intervals (0 to 35 min) in H-2 flow prior to growth. Structural and chemical changes occurring. in the copper substrate surface were. probed by grazing incidence. x-ray diffraction and x-ray photoelectron spectroscopy. The results were correlated with the Raman spectroscopy data, which can quantify the quality of graphene. With increasing. H-2 flow interval, secondary nucleation sites were observed and growth favored. few-layer graphene structures. The surface-adsorbed oxygen molecules and its conversion to an. OH terminated surface. with increasing hydrogen flow interval was found to be a key factor in. enhancing nucleation density. The Stranski-Krastanov type of nucleation was observed for samples grown with different time intervals of H-2 treatment, except 5 min of H-2 flow prior to growth for which the Volmer-Weber type of growth favored. monolayer graphene crystallite growth.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M\S IOP Publishing.
Subjects:	Materials Science Applied Physics/Condensed Matter Nanoscience/ Nanotechnology
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	20 Feb 2019 06:33
Last Modified:	20 Feb 2019 06:33
URI:	http://npl.csircentral.net/id/eprint/2840

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