Sang, Lina and Maheswari, Pankaj and Yu, Zhenwei and Yun, Frank F. and Zhang, Yibing and Dou, Shixue and Cai, Chuanbing and Awana, V. P. S. and Wang, Xiaolin (2017) Point defect induced giant enhancement of flux pinning in Co-doped FeSe0.5Te0.5 superconducting single crystals. AIP Advances, 7 (115016). 115016-1-115016-10. ISSN 2158-3226
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Abstract
Point defect pinning centers are the key factors responsible for the flux pinning and critical current density in type II superconductors. The introduction of the point defects and increasing their density without any changes to the superconducting transition temperature T-c, irreversibility field H-irr, and upper critical field H-c2, would be ideal to gain insight into the intrinsic point-defect-induced pinning mechanism. In this work, we present our investigations on the critical current density J(c), H-c2, H-irr, the activation energy U-0, and the flux pinning mechanism in Fe1-xCoxSe0.5Te0.5 (x = 0, 0.03 and 0.05) single crystals. Remarkably, we observe that the J(c) and U-0 are significantly enhanced by up to 12 times and 4 times for the 3at.% Co-doped sample, whereas, there is little change in T-c, H-irr, and H-c2. Furthermore, charge-carrier mean free path fluctuation, delta l pinning, is responsible for the pinning mechanism in Fe1-xCoxSe0.5Te0.5.
| Item Type: | Article |
|---|---|
| Additional Information: | copyright for this article belongs to M\S American Institute of Physics. |
| Subjects: | Materials Science Applied Physics/Condensed Matter Nanoscience/ Nanotechnology |
| Divisions: | UNSPECIFIED |
| Depositing User: | Users 27 not found. |
| Date Deposited: | 07 Dec 2018 08:23 |
| Last Modified: | 07 Dec 2018 08:23 |
| URI: | http://npl.csircentral.net/id/eprint/2824 |
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