Panigrahi, Jagannath and -, Vandana and Singh, Rajbir and Rauthan, C. M. S. and Singh, P. K. (2017) Crystalline silicon surface passivation by thermal ALD deposited Al doped ZnO thin films. AIP Advances, 7 (3). 035219-1-035219-7. ISSN 2158-3226

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The evidence of good quality silicon surface passivation using thermal ALD deposited Al doped zinc oxide (AZO) thin films is demonstrated. AZO films are prepared by introducing aluminium precursor in between zinc and oxygen precursors during the deposition. The formation of AZO is confirmed by ellip-sometry, XRD and Hall measurements. Effective minority carrier lifetime (tau(eff)) greater than 1.5ms at intermediate bulk injection levels is realized for symmetrically passivated p-type silicon surfaces under optimised annealing conditions of temperature and time in hydrogen ambient. The best results are realised at 450 degrees C annealing for > 15min. Such a layer may lead to implied open circuit voltage gain of 80mV.

Item Type: Article
Subjects: Materials Science
Applied Physics/Condensed Matter
Nanoscience/ Nanotechnology
Depositing User: Users 27 not found.
Date Deposited: 28 Aug 2018 11:50
Last Modified: 28 Aug 2018 11:50

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