Kaur, S. and Thakur, A. K. and Bawa, S. S. and Biradar, A. M. (2006) Thickness-independent memory effect in ferroelectric liquid crystals. Applied Physics Letters, 88 (12). 122905-1-122905-3. ISSN 0003-6951

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Memory in ferroelectric liquid crystals (FLCs) is well known in the literature where thickness of the cell is less than the pitch value of the material. Here, we report a thickness independent memory in a class of FLCs called the de Vries electroclinic liquid crystals. Thickness independency of memory effect is observed by dielectric spectroscopy and texture observation. The memory observed in Sm C-* phase of de Vries material is entirely different from conventional FLCs. In the former case, it is the inherent property of the material but in the latter it is dependent on the cell geometry. In de Vries material, it is probably the randomization that is playing a major role.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s American Institute of Physics.
Subjects: Applied Physics/Condensed Matter
Depositing User: Users 27 not found.
Date Deposited: 09 Aug 2018 07:14
Last Modified: 09 Aug 2018 07:14
URI: http://npl.csircentral.net/id/eprint/2573

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