Singh, A. K. and Lamba, Subhalakshmi and Joshi, S. K. (2006) Role of defects in transport through a quantum dot single electron transistor. Journal of Applied Physics , 99 (12). 124503-1-124503-4. ISSN 0021-8979

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The effect of a single dotlike defect on the transport through a quantum dot single electron transistor weakly coupled to external leads is studied. It is found that the conductance profile is changed significantly by the quantum mechanical tunneling between the dot and the defect and the interactions between them, both of which are dependent on the distance between the dot and the defect, as also by the morphology of the defect. In particular, we find that even a very small strength of interdot interaction has a major influence on the transport and must be taken into account in device fabrication.

Item Type: Article
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Subjects: Applied Physics/Condensed Matter
Depositing User: Users 27 not found.
Date Deposited: 07 Aug 2018 07:32
Last Modified: 07 Aug 2018 07:32

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