Chakraborty, B. R. and Kabiraj, D. and Diva, K. and Pivin, J. C. and Avasthi, D. K. (2006) Mixing behaviour of buried transition metal layer in silicon due to swift heavy ion irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 244 (1). pp. 209-212. ISSN 0168-583X

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The changes in behaviour of mixing at the interface of Si/Me/Si (Me = V, Fe, Co) due to irradiation by swift heavy ions of Au at 120 MeV with respect to the ion dose is reported here. The fluences were varied from 1 x 10(13) to 1 x 10(14) ions/cm(2) on the bi-layers of Si/Me/Si (Me = V, Fe, Co). The interface of Si/Me (Me = V, Fe, Co) was characterized using Rutherford backscattering spectroscopy (RBS) and secondary ion mass spectrometry (SIMS). In all the three cases, the atomic mixing width was found to be increasing monotonically with ion fluence. The mixing rate calculations were made and the diffusivity values thus obtained suggested a transient melt phase at the interface according to thermal spike model. Further work on the irradiated samples for characterizing the buried layers and formation of stable silicide phases by annealing are being carried out.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier.
Subjects: Instruments/ Instrumentation
Physics > Atomic and Molecular Physics
Physics > Nuclear Physics
Depositing User: Users 27 not found.
Date Deposited: 11 May 2018 07:58
Last Modified: 11 May 2018 07:58

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