Kumar, J. and Singh, R. K. and Siwach, P. K. and Singh, H. K. and Singh, R. and Rastogi, R. C. and Srivastava, O. N. (2006) Enhanced magnetoresistance in La0.82Sr0.18MnO3-pi-conjugated semiconducting polymer heterostructure. Solid State Communications, 138. pp. 422-425. ISSN 0038-1098

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We report a large enhancement (similar to 90%) in magnetoresi stance in La0.82Sr0.18MnO3 (LSMO) layers by incorporating a Tc-conjugated semiconducting polymer layer in between them. The epitaxial LSMO layers were deposited by DC magnetron sputtering on SrTiO3 single crystal substrates and have FM transition temperature (T-C) similar to 310 K. A semiconducting polymer poly(3-octylthiophene) (P3OT) layer was deposited over the epitaxial LSMO layer by solution dip coating technique and with subsequent deposition of another epitaxial LSMO layer, forming a LSMO-P3OT-LSMO heterostructure. The effect of P3OT incorporation on magnetotransport properties of this heterostructure has been examined in the temperature range 77-350 K. Large MR enhancement observed near room temperature in the FM regime is explained in terms of efficient magnetic field dependent carrier injection at LSMO/P3OT interface.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier.
Subjects: Physics
Depositing User: Users 27 not found.
Date Deposited: 09 May 2018 12:09
Last Modified: 09 May 2018 12:09
URI: http://npl.csircentral.net/id/eprint/2472

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