K., Shyam Prasad and Rao, Ashok and Gahtori, Bhasker and Bathula, Sivaiah and Dhar, Ajay and Du, Jia-Shiun and Kuo, Yung-Kang (2016) The low and high temperature thermoelectric properties of Sb doped Cu2SnSe3. Materials Research Bulletin, 83. 160 -166. ISSN 0025-5408

[img] PDF - Published Version
Restricted to Registered users only

Download (1593Kb) | Request a copy


The effect of Sb doping on the thermoelectric properties of Cu2SnSe3 was investigated. The Cu2Sn1-xSbxSe3 (0 <= x <= 0.04) compounds were prepared by solid state synthesis. The powder X-ray diffraction pattern of the samples showed a cubic structure (space group F (4) over bar 3m). The electrical resistivity decreased with increase in Sb content up to x = 0.02, then it increased with further increase in x. The electrical resistivity data follows variable hopping model at low temperatures. The Seebeck coefficient for all the samples is positive and analysis of data confirms that the variable hopping process is operative at low temperatures. The thermal conductivity is found to decrease with increase in Sb concentration, presumably due to point-defect scattering as a result of Sb substitution. The highest value of figure of merit at 400 K is equal to 0.0137 for the sample Cu2Sn0.99Sb0.01Se3 which is about eight times greater than that of the pristine sample.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier.
Uncontrolled Keywords: Chalcogenides X-ray diffraction Electrical properties Thermal conductivity Thermoelectrics
Subjects: Materials Science
Depositing User: Dr. Rajpal Walke
Date Deposited: 23 Apr 2018 11:46
Last Modified: 23 Apr 2018 11:46
URI: http://npl.csircentral.net/id/eprint/2395

Actions (login required)

View Item View Item