Kala, Shubhra and Kaur, Hardeep and Rastogi, Ankur and Singh, V. N. and Senguttuvan, T. D. (2016) Structural and opto-electronic features of pulsed laser ablation grown Cu2ZnSnS4 films for photovoltaic applications. Journal of Alloys and Compounds, 658. pp. 324-330. ISSN 0925-8388

[img] PDF - Published Version
Restricted to Registered users only

Download (1489Kb) | Request a copy


We report synthesis of Cu2ZnSnS4 thin films of kesterite structure by sulfurization of pulsed laser deposited (PLD) CuZnSn composite films at optimized temperature. These films show sharp optical absorption edge in the range of 1.4-1.6 eV, when prepared under optimized conditions of deposition and sulfurization. In general, the processed films are found to be non-stoichiometric with deficiency of S and excess of Zn. Electrical conductivity measurements in the temperature range 50-300 K reveal hopping transport with activation energies <= 20 meV at T < 80 K and a room temperature resistivity varying from 0.1 to 2.7 Omega-cm.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier.
Uncontrolled Keywords: CZTS Thin films PLD electrical transport
Subjects: Chemistry > Physical Chemistry
Materials Science
Metallurgy & Metallurgical Engineering
Depositing User: Dr. Rajpal Walke
Date Deposited: 20 Apr 2018 06:53
Last Modified: 20 Apr 2018 06:53
URI: http://npl.csircentral.net/id/eprint/2364

Actions (login required)

View Item View Item