Kumar, A. and Prakash, J. and Khan, Mohd Taukeer and Dhawan, S. K. and Biradar, A. M. (2010) Memory effect in cadmium telluride quantum dots doped ferroelectric liquid crystals. Applied Physics Letters, 97 (16). 163113-1 -163113-3 . ISSN 1077-3118

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A pronounced memory effect has been observed in cadmium telluride quantum dots (CdTe-QDs) doped ferroelectric liquid crystals (FLCs) by using dielectric and electro-optical methods. The memory effect has been attributed to the charge storage on the CdTe-QDs upon the application of dc bias across the sample cell. The FLC molecules remain in the switched state in vicinity of the charge stored on QDs even after removal of bias. It has been observed that the memory effect depends on doping concentrations of CdTe-QDs and the FLC material used.

Item Type: Article
Subjects: Physics
Depositing User: Ms Neetu Chandra
Date Deposited: 05 Jun 2012 11:40
Last Modified: 05 Jun 2012 11:40
URI: http://npl.csircentral.net/id/eprint/236

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