Agrawal, Kalpana and Rana, Omwati and Singh, Nidhi and Srivastava, Ritu and Rajput, S. S. (2016) Low voltage organic permeable base N-type transistor. Applied Physics Letters, 109 (16). ISSN 0003-6951

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Abstract

A vertical n-type organic permeable metal base transistor was fabricated using N, N-ditridecylperylene-3,4,9,10-tetracarboxylic diimide as an active material for making emitter and collector regions. A composite of Al//C-60/Al/AlOx forms the base region of the proposed structure. The detailed study of the Early effect was carried out for determining the intrinsic gain, transconductance, and output impedance which were found to be 92, 145 mu Omega(-1), and 0.634 M Omega, respectively, at an applied bias of 1 V between collector-emitter contacts. The device is capable of operating at a low voltage of 1 V, which makes it suitable for low voltage and high frequency applications.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s AIP Publishing.
Subjects:	Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	30 Jan 2018 11:13
Last Modified:	30 Jan 2018 11:13
URI:	http://npl.csircentral.net/id/eprint/2269

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