Deswal, Sweety and Jain, Ashish and Borkar, Hitesh and Kumar, Ashok and Kumar, Ajeet (2016) Conduction and switching mechanism in Nb2O5 thin films based resistive switches. EPL, 116 (1). 17003-1-17003-5. ISSN 0295-5075

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We report unipolar resistive switching of Pt/Nb2O5/Al device with orthorhombic crystalline phase prepared by reactive sputtering method. It showed non-volatile reproducible unipolar switching with ON/OFF resistance ratio of 10(3) or higher. The range of SET and RESET voltage was 1.0-2.0V and 0.3-0.8V, respectively, depending on devices and their dimension. The charge carriers followed Ohmic and space-charge-limited conduction (SCLC) behaviour in low-resistance state (LRS) and high-resistance state (HRS), respectively. An impedance spectroscopy analysis as well as a drift and diffusion of oxygen ion vacancy model are presented to explain the conducting filament formation and its rupture during the SET and RESET processes.

Item Type: Article
Subjects: Physics
Depositing User: Dr. Rajpal Walke
Date Deposited: 16 Nov 2017 08:07
Last Modified: 16 Nov 2017 08:07

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