Gogoi, Purabi and Dixit , P. N. and Agarwal, Pratima (2008) Transport and stability studies on high band gap a-Si : H films prepared by argon dilution. In: International Workshop on the Physics of Mesoscopic and Disordered Materials (MESODIS 2006) , DEC 04-08, 2006 , Indian Institute of Technology, Kanpur, INDIA .

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Device quality hydrogenated amorphous silicon films (a-Si:H) are deposited at a high deposition rate (4-5 angstrom/s) using a mixture of argon and hydrogen-diluted silane. The films exhibit good opto-electronic properties and show less degradation upon light soaking. Light-induced changes in conductivity could be annealed at much lower temperature. The presence of Ar* and atomic hydrogen in plasma replaces the weak Si-Si bonds, which are responsible for light-induced degradation by strong Si-Si bonds. This results in the improved stability of the films.

Item Type: Conference or Workshop Item (Paper)
Subjects: Physics
Depositing User: Ms Neetu Chandra
Date Deposited: 13 Apr 2017 08:02
Last Modified: 13 Apr 2017 08:02
URI: http://npl.csircentral.net/id/eprint/2098

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