Singh Gill, Fateh and Panwar, Varij and Gupta, Himanshu and Kalra, G. S. and Chawla, Shanta and Kumar, R. and Mehra, R. M. (2015) Study of growth of dot and column in porous silicon samples of various thicknesses prepared at a constant current density. Physica E: Low-dimensional Systems and Nanostructures, 73. pp. 110-115. ISSN 1386-9477

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Abstract

Porous silicon is considered to be composed either of spherical shaped interconnected silicon quantum dots or combination of quantum clots and columns. This paper presents a study of a series of porous silicon films of various thicknesses, prepared at a 20 mA current density by the electrochemical etching technique. The photoluminescence spectra of the series samples were monitored. Further, we used a photoluminescence fitting model by Singh and John (John-Singh) in its extended form by Elhouichet to estimate the percentage of dots and columns; their average diameters and corresponding variances. The shape of experimental photoluminescence spectra fits well with John-Singh model. As a result, the analytical curves drawn using the fitting parameters showed the decrease in mean crystallite diameter of columns and dot while increase in variance of column and decrease in variance of dots. Hence, more homogenous dots are formed. Thus, it results in the formation of a more ordered nanocrystalline structure with more porosity. It verified the quantum assumptions. The discrepancy in the PL behavior of a sample is well explained by the model.

Item Type:	Article
Uncontrolled Keywords:	Porous silicon Dot andcolumn Photoluminescence Nano-porous Nano-crystalline
Subjects:	Applied Physics/Condensed Matter Nanoscience/ Nanotechnology
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	21 Oct 2016 05:18
Last Modified:	21 Oct 2016 05:18
URI:	http://npl.csircentral.net/id/eprint/2013

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