Panwar, O. S. and Rawal, Ishpal and Tripathi, R. K. and Srivastava, A. K. and Kumar, Mahesh (2015) Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique. Journal of Alloys and Compounds, 628. 135-145 . ISSN 0925-8388

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This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size similar to 10-50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp(3)/sp(2) ratio accompanied with the highest hardness of similar to 18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A(D)/A(G)) and the highest conductivity (similar to 2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 x 10(-7) S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott's variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

Item Type: Article
Uncontrolled Keywords: Nanocrystalline carbon thin films Filtered cathodic jet carbon arc Gaseous environment Structural and nanomechanical properties VRH conduction
Subjects: Chemistry > Physical Chemistry
Materials Science
Metallurgy & Metallurgical Engineering
Depositing User: Dr. Rajpal Walke
Date Deposited: 20 Oct 2016 11:44
Last Modified: 20 Oct 2016 11:44

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