Gope, Jhuma and -, Vandana and Batra, Neha and Panigrahi, Jagannath and Singh, Rajbir and Maurya, K. K. and Srivastava, Ritu and Singh, P. K. (2015) Silicon surface passivation using thin HfO2 films by atomic layer deposition. Applied Surface Science, 357. pp. 635-642. ISSN 0169-4332

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Hafnium oxide (HfO2) is a potential material for equivalent oxide thickness (EDT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (similar to 8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-a-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 degrees C for 10 min where the SRV reduces to similar to 20 cm/s. Conductance measurements show that the interface defect density (D-it) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

Item Type: Article
Uncontrolled Keywords: ALDHfO2 Fixed charge Interface defect density
Subjects: Chemistry > Physical Chemistry
Materials Science
Applied Physics/Condensed Matter
Depositing User: Dr. Rajpal Walke
Date Deposited: 13 Oct 2016 07:27
Last Modified: 13 Oct 2016 07:27

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