A., Parashar and Kumar, Sushil and Jhuma, Gope and Rauthan, C. M. S. and Dixit, P. N. and Hashmi, S. A. (2010) Influence of argon dilution on growth and properties of hydrogenated nanocrystalline silicon films. Solar Energy Materials and Solar Cells , 94 (5). 892-899 . ISSN 0927-0248

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The effect of argon concentration (66–87%) in total gaseous mixture (SiH4+H2+Ar) on growth and properties of hydrogenated nanocrystalline silicon films deposited by RF (13.56 MHz) PECVD technique was investigated. Raman and XRD measurements revealed increasing argon fraction favored enhancement of crystallinity, enlargement of crystallites and relaxation of strained bonds. Photoluminescence spectra of nc-Si:H films exhibited two radiative transitions in the photon energy ranges of 2.8–3.1 eV and 1.6–2.1 eV. The high energy PL peaks are attributed to surface effect of the films whereas peaks in the range of 1.6–2.1 eV are due to nanocrystallinity in the films. Argon dilution also helped enhancement of deposition rate and conductivity of the films. A film deposited at 81% of argon fraction possesses high crystallinity (75%), conductivity in the order of 10−5 (Ω cm)−1, size of the crystallite (Raman=12 nm, XRD=18 nm), and low residual stress (125 MPa).

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords: Nanocrystalline and microcrystalline silicon; Argon dilution; PECVD; Raman spectroscopy
Subjects: Materials Science
Depositing User: Ms Neetu Chandra
Date Deposited: 04 May 2012 08:50
Last Modified: 04 May 2012 08:50
URI: http://npl.csircentral.net/id/eprint/198

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