Batra, Neha and Gope, Jhuma and -, Vandana and Panigrahi, Jagannath and Singh, Rajbir and Singh, P. K. (2015) Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation. AIP Advances, 5 (6). 067113-1-067113-10. ISSN 2158-3226

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The effect of deposition temperature (T-dep) and subsequent annealing time (t(anl)) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, Q(F). The interface defect density (D-it) decreases with increase in T-dep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for T-dep >= 200 degrees C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min).

Item Type: Article
Subjects: Materials Science
Applied Physics/Condensed Matter
Nanoscience/ Nanotechnology
Depositing User: Dr. Rajpal Walke
Date Deposited: 28 Sep 2016 05:51
Last Modified: 28 Sep 2016 05:51

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