Kumar, Ashok and Barrionuevo, D. and Ortega, N. and Shukla, A. K. and Shannigrahi, Santiranjan and Scott, J. F. and Katiyar, Ram S. (2015) Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions. Applied Physics Letters, 106 (13). 132901-1-132901-5. ISSN 0003-6951

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Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level x-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn3+/Mn4+ ion ratio in the LSMO with 7 nm polar capping.

Item Type: Article
Subjects: Applied Physics/Condensed Matter
Depositing User: Dr. Rajpal Walke
Date Deposited: 23 Sep 2016 05:35
Last Modified: 23 Sep 2016 05:35
URI: http://npl.csircentral.net/id/eprint/1826

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