Jain, Vipin Kumar and Kumar, Praveen and Bhandari, Deepika and Vijay, Y. K. (2010) Growth and characterization of transparent conducting nanostructured zinc indium oxide thin films. Thin Solid Films, 519 (3). pp. 1082-1086. ISSN 0040-6090

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Abstract

Transparent conductive oxide (TCO) films have been widely used in various applications, such as for transparent electrodes in flat-panel displays, and in solar cells, optoelectronic devices, touch panels and IR reflectors. Among these, tin doped zinc oxide (ZTO) and indium doped zinc oxide (ZIO) have attracted considerable attention. Particularly, IZO thin film is the best candidate for high-quality transparent conducting electrodes in OLEDs and flexible displays. In this work zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In2O3 — 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the physical properties. The XRF spectra revealed the presence of zinc and indium with varying concentration in ZIO thin films, while the surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. The core level spectra were deconvoluted to see the effect of chemical changes, while the valance band spectra manifest the electronic transitions. The surface morphology studies of the films using atomic force microscopy (AFM) revealed the formation of nanostructured ZIO thin films. The optical band gap was also found to be decreased for both types of films with increasing concentration of In2O3.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords:	ZIO thin film; Flash evaporation; Annealing; XRF; XPS; AFM; Optical band gap
Subjects:	Materials Science Physics
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	27 Apr 2012 08:42
Last Modified:	27 Apr 2012 08:42
URI:	http://npl.csircentral.net/id/eprint/178

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