Shahi, P. and Kumar, A. and Singh, Rahul and Singh, Ripandeep and Sastry, P. U. and Das, A. and Joshi, Amish G. and Ghosh, A. K. and Banerjee, A. and Chatterje, Sandip (2015) Effect of Chemical Pressure at the Boundary of Mott Insulator to Itinerant Electron Limit Transition in Spinel Vanadates. Science of Advanced Materials, 7 (6). pp. 1187-1196. ISSN 1947-2935

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The effect of chemical pressure on the structural, transport, magnetic and electronic properties of ZnV2O4 has been investigated by doping Mn and Co onto the Zn sites of ZnV2O4. With Mn doping the V-V distance increases and with Co doping it decreases. The resistivity and thermoelectric power data indicate that, as the V-V distance decreases, the system moves towards quantum phase transition. The transport data also indicate that the conduction is due to small polaron hopping. The chemical pressure shows a non-monotonous behaviour of charge gap and activation energy. On the other hand, when Ti is doped on the V-site of ZnV2O4, the metal metal distance decreases and, at the same time, T-N also increases.

Item Type: Article
Uncontrolled Keywords: Mott Insulator, Magnetization, Spinel Vanadates
Subjects: Materials Science
Applied Physics/Condensed Matter
Nanoscience/ Nanotechnology
Depositing User: Dr. Rajpal Walke
Date Deposited: 21 Sep 2016 11:43
Last Modified: 21 Sep 2016 11:43

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