Bhunia, R. and Bhadra, N. and Das, S. and Hussain, S. and Chakraborty, B. R. and Bhar, R. and Pal, A. K. (2015) Coulomb Gap and Metal-Insulator-Semiconductor (MIS) Transition in ZnO/n-Ag/ZnO Film in the Plasmonic Domain. Plasmonics, 10 (6). pp. 1291-1300. ISSN 1557-1955

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Abstract

Silver nanoparticles were incorporated in between zinc oxide layers to realize ZnO/n-Ag/ZnO sandwich structure. Particle size and volume fraction of nanocrystalline silver particles were optimized to obtain a layer exhibiting a strong plasmonic peak even when embedded in ZnO sandwich structure. Strong surface plasmon resonance peak in the optical absorbance spectra was observed at similar to 480 nm. Electrical conductivity in the temperature range of 10-200 K in the dark and when illuminated at 480 nm was studied to understand the transport processes associated with this material. The effect of surface plasmon resonance on the electron transport process was also specifically addressed in the metal-insulator-semiconductor (MIS) transition domain. The effect of additional density of states in the higher energy domain on the surface plasmon peak has been discussed and resulting broadening of the coulomb gap has been explained. Both the hopping energy (W (OPT)) and width of coulomb gap (Delta (ES)) increased in the plasmonic region.

Item Type:	Article
Uncontrolled Keywords:	Electron transport . Nanocrystalline silver . Plasmonics . MIS transition
Subjects:	Chemistry > Physical Chemistry Materials Science Nanoscience/ Nanotechnology
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	20 Sep 2016 07:20
Last Modified:	20 Sep 2016 07:20
URI:	http://npl.csircentral.net/id/eprint/1749

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