Pradhan, M. M. and Garg, R. K. and Arora, Manju (1987) Interaction of oxygen and carbon impurities with the multiphonon infrared absorption bands of Silicon at low temperatures. Infrared physics, 27 (4). pp. 207-213. ISSN 0020-0891

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Infrared absorptance measurements of polycrystalline silicon and single crystals of silicon having oxygen and carbon impurities were carried out at low temperatures in the wavelength range of multiphonon infrared absorption of silicon. Peak absorptance and frequencies were measured at temperatures from 10 to 130 K at intervals of 10 K. Absorptance-temperature curves were plotted for multiphonon bands and impurity bands. It has been observed that the three phonon band [2 TO (Γ) + TA (L)] exhibits a resonance-like behaviour with the anti-stretching mode of Si-O at low temperatures.

Item Type: Article
Subjects: Optics
Depositing User: Ms Neetu Chandra
Date Deposited: 01 Aug 2016 07:06
Last Modified: 01 Aug 2016 07:19

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