Barrionuevo, D and Zhang, Le and Ortega, N and Sokolov, A and Kumar, A and Misra, Pankaj and Scott, J. F. and Katiyar, R. S. (2014) Tunneling electroresistance in multiferroic heterostructures. Nanotechnology, 25 (49). ISSN 0957-4484

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We demonstrate the room temperature polar switching and tunneling in PbZr0.52Ti0.48O3 (PZT) ultra-thin films of thickness 3-7 nm, sandwiched between platinum metal and ferromagnetic La0.67Sr0.33MnO3 (LSMO) layers, which also shows magnetic field dependent tunnel current switching in Pt/PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3 heterostructures. The epitaxial nature, surface quality and ferroelectric switching of heterostructured films were examined with the help of x-ray diffraction patterns, atomic force microscopy, and piezo force microscopy, respectively. The capacitance versus voltage graphs show butterfly loops above the coercive field (> +/- 3 V) of PZT for small probe area (similar to 16 mu m(2)). The effect of ferroelectric switching was observed in current density versus voltage curves with a large variation in high-resistance/low-resistance (HRS/LRS) ratio (2:1 to 100:1), however, these effects were more prominent in the presence of in-plane external magnetic field. The conductance is fitted with Brinkman's model, and the parabolic conductance upon bias voltage implies electron tunneling governs the transport.

Item Type: Article
Additional Information: Copyright for this article belongs to M/S IOP Publishing.
Uncontrolled Keywords: ferroelectric tunnel junctions tunneling electroresistance transport properties ultrathin films
Subjects: Materials Science
Depositing User: Dr. Rajpal Walke
Date Deposited: 23 Nov 2015 10:43
Last Modified: 23 Nov 2015 10:43

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