Kumar, Pravin and Singh, Udai Bhan and Mal, Kedar and Ojha, Sunil and Sulania, Indra and Kanjilal, Dinakar and Singh, Dinesh and Singh, Vidya Nand
(2014)
Synthesis of Pt nanoparticles and their burrowing into Si due to synergistic effects of ion beam energy losses.
Beilstein Journal of Nanotechnology, 5.
pp. 1864-1872.
ISSN 2190-4286
Abstract
We report the synthesis of Pt nanoparticles and their burrowing into silicon upon irradiation of a Pt-Si thin film with medium-energy neon ions at constant fluence (1.0 x 10(17) ions/cm(2)). Several values of medium-energy neon ions were chosen in order to vary the ratio of the electronic energy loss to the nuclear energy loss (S-e/S-n) from 1 to 10. The irradiated films were characterized using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). A TEM image of a cross section of the film irradiated with S-e/S-n = 1 shows approximate to 5 nm Pt NPs were buried up to approximate to 240 nm into the silicon. No silicide phase was detected in the XRD pattern of the film irradiated at the highest value of S-e/S-n. The synergistic effect of the energy losses of the ion beam (molten zones are produced by S-e, and sputtering and local defects are produced by S-n) leading to the synthesis and burrowing of Pt NPs is evidenced. The Pt NP synthesis mechanism and their burrowing into the silicon is discussed in detail.
| Item Type: |
Article
|
| Uncontrolled Keywords: |
atomic force microscopy
burrowing of nanoparticles
medium-energy ion irradiation
nuclear and electronic energy loss
Rutherford backscattering spectroscopy
scanning electron microscopy
Thinfilms
transmission electron microscopy |
| Subjects: |
Materials Science |
| Divisions: |
UNSPECIFIED |
| Depositing User: |
Dr. Rajpal Walke
|
| Date Deposited: |
23 Nov 2015 09:56 |
| Last Modified: |
23 Nov 2015 09:56 |
| URI: |
http://npl.csircentral.net/id/eprint/1595 |
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