Kesarwani, Ajay and Panwar, O. S. and Tripathi, R. K. and Chockalingam, Sreekumar (2013) Synthesis and characterization of phosphorus doped hydrogenated silicon films by filtered cathodic vacuum arc technique. In: 17th International Workshop on the Physics of Semiconductor Devices (IWPSD) , DEC 10-14, 2013 , Noida, INDIA .

PDF - Published Version
Download (1497Kb) | Preview


Phosphorous doped hydrogenated silicon thin film has been deposited by filtered cathodic vacuum arc technique at different substrate temperatures at a fixed hydrogen gas pressure. X-ray diffraction, electrical conductivity and optical band gap and scanning electron microscopy have been used to characterize the properties of films

Item Type: Conference or Workshop Item (Paper)
Subjects: Engineering
Materials Science
Depositing User: Dr. Rajpal Walke
Date Deposited: 20 Nov 2015 07:56
Last Modified: 20 Nov 2015 07:56

Actions (login required)

View Item View Item