Ramar, M. and Manimozhi, R. and Suman, C. K. and Ahamad, R. and Srivastava, Ritu (2014) Study of Schottky barrier contact in hybrid CdSe Quantum dot organic solar cells. In: 17th International Workshop on the Physics of Semiconductor Devices (IWPSD) , DEC 10-14, 2013, Noida, INDIA .

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The hybrid organic solar cell devices are fabricated from P3HT:PCBM with Quantum dot CdSe materials.The Schottky barrier built-in potential of 0.45 V was calculated from C-V measurements. The photo current (J(Light) - J(Dark))equals to zero at compensation voltage of 0.61 V. The depletion width (W) of an abrupt Schottky junction is calculated using carrier density. The Cole - Cole plot of the device is also determined from different bias voltage in the range of 10 - 1M Hz. The device can be modeled as the combination of RC parallel circuit.

Item Type: Conference or Workshop Item (Paper)
Subjects: Engineering
Materials Science
Depositing User: Dr. Rajpal Walke
Date Deposited: 20 Nov 2015 06:23
Last Modified: 20 Nov 2015 06:23
URI: http://npl.csircentral.net/id/eprint/1566

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