Ramar, M. and Manimozhi, R. and Suman, C. K. and Ahamad, R. and Srivastava, Ritu (2014) Study of Schottky barrier contact in hybrid CdSe Quantum dot organic solar cells. In: 17th International Workshop on the Physics of Semiconductor Devices (IWPSD) , DEC 10-14, 2013, Noida, INDIA .
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Abstract
The hybrid organic solar cell devices are fabricated from P3HT:PCBM with Quantum dot CdSe materials.The Schottky barrier built-in potential of 0.45 V was calculated from C-V measurements. The photo current (J(Light) - J(Dark))equals to zero at compensation voltage of 0.61 V. The depletion width (W) of an abrupt Schottky junction is calculated using carrier density. The Cole - Cole plot of the device is also determined from different bias voltage in the range of 10 - 1M Hz. The device can be modeled as the combination of RC parallel circuit.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Engineering Materials Science |
| Divisions: | UNSPECIFIED |
| Depositing User: | Dr. Rajpal Walke |
| Date Deposited: | 20 Nov 2015 06:23 |
| Last Modified: | 20 Nov 2015 06:23 |
| URI: | http://npl.csircentral.net/id/eprint/1566 |
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