-, Vandana and Batra, Neha and Gope, Jhuma and Rauthan, CMS and Sharma, Mukul and Srivastava, Ritu and Srivastava, S. K. and Pathi, P. and Singh, P. K. (2014) Silicon Surface Passivation by Al2O3 film using Atomic Layer Deposition. In: 17th International Workshop on the Physics of Semiconductor Devices (IWPSD) , DEC 10-14, 2013, Noida, INDIA .

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Silicon surface passivation is studied using Al2O3 thin film deposited by thermal process using atomic layer deposition (ALD) method. Minority carrier lifetime measurements showed that the film passivate the silicon surface effectively. Capacitancevoltage measurement confirms the activation of negative fixed charges after sintering at 400 degrees C.

Item Type: Conference or Workshop Item (Paper)
Subjects: Engineering
Materials Science
Depositing User: Dr. Rajpal Walke
Date Deposited: 05 Nov 2015 05:27
Last Modified: 05 Nov 2015 05:27
URI: http://npl.csircentral.net/id/eprint/1526

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