Srivastava, Sanjay K. and Kumar, Dinesh and Singh , P. K. and Kar, M. and Kumar, Vikram and Husain, M. (2010) Excellent antireflection properties of vertical silicon nanowire arrays. Solar Energy Materials and Solar Cells , 94 (9). pp. 1506-1511. ISSN 0927-0248

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We report a simple approach to prepare cost effective antireflective surface directly on silicon wafers, which consists of arrays of vertically aligned silicon nanowires (VA-SiNWA). Large area VA-SiNWA were realized by silver induced wet chemical etching of p-silicon (1 0 0) substrates in aqueous HF and AgNO3 solution at room temperature. Length of Si wires (diameter in 50–300 nm range) was found to increase linearly with etching time (0–120 min). A remarkable reduction in reflectivity (Rλ) for surfaces with Si wires was observed. The value of Rλ less than 2% was realized in the 300–600 nm wavelength range in the case of ∼12 μm long Si wires, a value better than the best Rλ reported in anisotropically textured surface or single layer antireflection coatings. The VA-SiNWA behaves as a subwavelength structured surface that could suppress the reflectivity to a great extent. Such surfaces may have potential applications as antireflection surface for silicon solar cells.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords: Silicon nanowires; Metal induced etching; Black silicon; Antireflective coatings (ARC)
Subjects: Energy Fuels
Materials Science
Depositing User: Ms Neetu Chandra
Date Deposited: 17 Apr 2012 12:11
Last Modified: 17 Apr 2012 12:11

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