Tripathi, R. K. and Panwar, O. S. and Kesarwani, Ajay Kumar and Chockalingam, Sreekumar (2014) Phosphorous doped hydrogenated amorphous silicon carbide films deposited by filtered cathodic vacuum arc technique. In: 17th International Workshop on the Physics of Semiconductor Devices (IWPSD) Location: Noida, INDIA Date: DEC 10-14, 2013, DEC 10-14, 2013, Noida, INDIA.
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Abstract
In the present work, we report the growth and characterization of phosphorous doped hydrogenated amorphous silicon carbide (a-SiC: H) films deposited by filtered cathodic vacuum arc technique using solid silicon target as cathode in presence of acetylene gas. The films have been characterized by x-ray diffraction, dark conductivity, activation energy, optical band gap, scanning electron microscopy, energy dispersive x-ray analysis and residual stress. The effect of arc current on the properties of P doped a-SiC: H films have been studied
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Engineering Materials Science |
| Divisions: | UNSPECIFIED |
| Depositing User: | Dr. Rajpal Walke |
| Date Deposited: | 30 Oct 2015 07:16 |
| Last Modified: | 30 Oct 2015 07:16 |
| URI: | http://npl.csircentral.net/id/eprint/1460 |
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