Kumar, Praveen and Kumar, Mahesh and Nötzel, R. and Shivaprasad, S. M. (2014) Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence. Materials Chemistry and Physics, 145 (3). 274-277 . ISSN 0254-0584

PDF - Published Version Restricted to Registered users only Download (773Kb) | Request a copy

Abstract

We present the surface modification of Si(111) into silicon nitride by exposure to energetic N-2(+) ions. In-situ UHV experiments have been performed to optimize the energy and fluence of the N-2(+) ions to form silicon nitride at room temperature (RT) and characterized in-situ by X-ray photoelectron spectroscopy. We have used N-2(+) ion beams in the energy range of 0.2-5.0 keV of different fluence to induce surface reactions, which lead to the formation of SixNy on the Si(111) surface. The XPS core level spectra of Si(2p) and N(1s) have been deconvoluted into different oxidation states to extract qualitative information, while survey scans have been used for quantifying of the silicon nitride formation, valence band spectra show that as the N-2(+) ion fluence increases, there is an increase in the band gap. The secondary electron emission spectra region of photoemission is used to evaluate the change in the work function during the nitridation process. The results show that surface nitridation initially increases rapidly with ion fluence and then saturates.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/S Elsevier.
Uncontrolled Keywords:	Nitrides Surface Sputtering X-ray photo-emission spectroscopy (XPS)
Subjects:	Materials Science
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	29 Oct 2015 10:51
Last Modified:	29 Oct 2015 10:51
URI:	http://npl.csircentral.net/id/eprint/1437

Actions (login required)

View Item