Khan, Firoz and Baek, Seong-Ho and Singh, S. N. and Singh, P. K. and Husain, M. and Kim, Jae Hyun (2014) Influence of Al content on surface passivation properties of Al rich ZnO films for solar cell application. Solar Energy, 110. pp. 595-602. ISSN 0038-092X

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A systematic study of hydrogen sintered aluminum rich zinc oxide (AZO) films is made from the view point of their application as surface passivation layer for silicon solar cell. AZO films of various Al and Zn molar concentration ratios (0 < R-Al/Zn < 40%) are made and their electrical and optical properties are studied. The lowest surface recombination velocity (similar to 10 cm/s) is realized in the film with R-Al/Zn approximate to 30% as inferred from minority carrier lifetime measurements. The passivation effect of AZO layer may be attributed to presence of hydrogen whose concentration is maximum (similar to 3.93 x 10(22) atoms/cm(3)) for R-Al/Zn approximate to 30%. Effect of surface passivation is manifested in the efficiency of solar cell where an improvement >4% vis-a-vis the control cell (without AZO layer) is seen after AZO layer is applied on the rear surface of the cell.

Item Type: Article
Additional Information: Copyright for this article belongs to M/S Elsevier.
Uncontrolled Keywords: Silicon solar cells; Passivating layers; Al rich zinc oxide; S urface recombination velocity
Subjects: Energy Fuels
Depositing User: Dr. Rajpal Walke
Date Deposited: 13 Oct 2015 10:41
Last Modified: 13 Oct 2015 10:41

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