Bansal, Shikha and Pandya, D. K. and Kashyap, Subhash C. and Haranath, D. (2014) Growth ambient dependence of defects, structural disorder and photoluminescence in SnO2 films deposited by reactive magnetron sputtering. Journal of Alloys and Compounds , 583. pp. 186-190. ISSN 0925-8388

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Abstract

The present paper deals with the study of photoluminescence (PL) and the other physical properties (structural, electrical and optical) of SnO2 thin films with controlled disorder and intrinsic defects induced during the reactive magnetron sputtering by changing oxygen flow rate from 12 to 16 sccm. The changes in unit cell volume, near band- edge optical transparency and width of Urbach tail in the films are correlated with the structural disorder and presence of intrinsic defects induced by growth under different oxygen partial pressures. The increased intensity of the PL near UV emission and decrease in the intensity of visible emission peaks with increase in oxygen flow rate is linked with the decrease in oxygen vacancies and tin interstitials in the films. With increasing oxygen content, whereas the electrical resistivity of the films minimizes to a value of 4.3 x 10(-2) ohm cm at 14 sccm, the mobility of the films increases to a saturation value 15 cm(2) V-1 s(-1). The donor-defect concentration linked carrier density is observed to decrease monotonically from 2 x 10(19) to 0.6 x 10(19) cm(-3).

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/S Elsevier.
Uncontrolled Keywords:	Photoluminescence Urbach tail width SnO2 thin films Optical band gap Electrical properties Reactive sputtering
Subjects:	Chemistry Materials Science Metallurgy & Metallurgical Engineering
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	05 Oct 2015 11:25
Last Modified:	05 Oct 2015 11:25
URI:	http://npl.csircentral.net/id/eprint/1313

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