Kumar, Mukesh and Pasha, S. K. and Krishna, T. C. Shibin and Singh, Avanish Pratap and Kumar, Pawan and Gupta, Bipin Kumar and Gupta, Govind (2014) Facile synthesis and photoluminescence spectroscopy of 3D-triangular GaN nano prism islands. Dalton Transactions, 43 (31). pp. 11855-11861. ISSN 1477-9226

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We report a strategy for fabrication of 3D triangular GaN nano prism islands (TGNPI) grown on Ga/Si(553) substrate at tow temperature by N-2(+) ions implantation using a sputtering gun technique. The annealing of Ga/Si(553) (600 degrees C) followed by nitridation (2 key) shows the formation of high quality GaN TGNPI cross-section. TGNPI morphology has been confirmed by atomic force microscopy. Furthermore, these nano prism islands exhibit prominent ultra-violet luminescence peaking at 366 nm upon 325 nm excitation wavelength along with a low intensity yellow luminescence broad peak at 545 nm which characterizes low defects density TGNPI. Furthermore, the time-resolved spectroscopy of luminescent TGNPI in nanoseconds holds promise for its futuristic application in next generation UV-based sensors as well as many portable optoelectronic devices.

Item Type: Article
Subjects: Chemistry
Depositing User: Dr. Rajpal Walke
Date Deposited: 05 Oct 2015 10:52
Last Modified: 05 Oct 2015 10:52
URI: http://npl.csircentral.net/id/eprint/1302

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