Chauhan, Amit Kumar Singh and Eldose, Nirosh M. and Mishra, Monu and Niazi, Asad and Nair, Lekha and Gupta, Govind (2014) Evolution of kinetically controlled In-induced surface structure on Si(557) surfacee. Applied Surface Science, 314. pp. 586-591. ISSN 0169-4332

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This paper introduces issue of kinetically controlled and temperature driven superstructural phase transition of Indium (In) on atomically clean high index Si(5 5 7)-7 x 1 surface. Auger electron spectroscopy analysis reveals that at room-temperature (RT) with a controlled incident flux of 0.002 ML/s; In over layers evolve through the Frank-van der Merwe growth mode and yield a (1 x 1) diffraction pattern for coverage >= 1 ML For substrate temperature <500 C, growth of In follows Stranski-Krastanov growth mode while for temperature >500 degrees C island growth is observed. On annealing the In/Si(5 5 7) interface in the temperature range 250-340 degrees C, clusters to two dimensional (2D) layer transformation on top of a stable monolayer is predominated. In-situ RT and HT adsorption and thermal desorption phenomena revealed the formation of coverage and temperature dependent thermally stable In induced superstructural phases such as (4 x 1) at 0.5 ML (520 C), (root 3 x root 3-R30 degrees) at 0.3 ML (560 C) and (7 x 7) at 0.1 ML (580 C). These indium induced superstructures could be utilized as potential substrate for the growth of various exotic 1D/2D structures.

Item Type: Article
Additional Information: Copyright for this article belongs to M/S Elsevier.
Uncontrolled Keywords: Si(5 5 7) Indium Adsorption Thermal desorption AES LEEDa
Subjects: Chemistry
Materials Science
Polymer Science
Depositing User: Dr. Rajpal Walke
Date Deposited: 01 Oct 2015 06:33
Last Modified: 01 Oct 2015 06:33

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