Prasanna, S. and Shaik, H. and Rao, G. Mohan and -, Vandana and Singh, P. K. and Jayakumar, S. and Balasundaraprabhu, R. (2014) Effect of post-deposition annealing on composition and electrical properties of dc reactive magnetron sputtered Al2O3 thin films. Materials Technology, 29 (2). 83-89 . ISSN 1066-7857

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Abstract

We have investigated the effect of post- deposition annealing on the composition and electrical properties of alumina (Al2O3) thin films. Al2O3 were deposited on n-type Si < 100 >. substrates by dc reactive magnetron sputtering. The films were subjected to post- deposition annealing at 623, 823 and 1023 K in vacuum. X-ray photoelectron spectroscopy results revealed that the composition improved with post- deposition annealing, and the film annealed at 1023 K became stoichiometric with an O/Al atomic ratio of 1.49. Al/Al2O3/Si metal-oxide-semiconductor (MOS) structures were then fabricated, and a correlation between the dielectric constant epsilon(r) and interface charge density Q(i) with annealing conditions were studied. The dielectric constant of the Al2O3 thin films increased to 9.8 with post- deposition annealing matching the bulk value, whereas the oxide charge density decreased to 3.11 x 10(11) cm(-2.) Studies on current-voltage IV characteristics indicated ohmic and Schottky type of conduction at lower electric fields (<0.16 MV cm(-1)) and space charge limited conduction at higher electric fields.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/S Maney Publishing.
Subjects:	Materials Science
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	22 Sep 2015 10:58
Last Modified:	22 Sep 2015 10:58
URI:	http://npl.csircentral.net/id/eprint/1249

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