MUTHIAH, SARAVANAN and SIVAIAH, B. and GAHTORI, B. and TYAGI, K. and SRIVASTAVA, A. K. and PATHAK, B. D. and DHAR, AJAY and BUDHANI, R. C. (2014) Double-Doping Approach to Enhancing the Thermoelectric Figure-of-Merit of n-Type Mg2Si Synthesized by Use of Spark Plasma Sintering. Journal of Electronic Materials , 43 (6). pp. 2035-2039. ISSN 0361-5235

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We report significant enhancement of the thermoelectric figure-of-merit of Mg2Si by double-doping with a combination of Bi, Pb, and Sb as doping elements. Addition of any two of these three elements to Mg2Si increases the electrical conductivity by more than three orders of magnitude at 323 K, irrespective of the doping elements used. However, a corresponding decrease in the Seebeck coefficient is observed in comparison with undoped Mg2Si. Irrespective of the combination of the three elements used for double doping, a figure-of-merit of approximately 0.7 at 873 K is obtained for Mg2Si; this is primarily because of enhancement of the electrical conductivity

Item Type: Article
Additional Information: Copyright for this article belongs to M/S IEEE.
Uncontrolled Keywords: Mg2Si, spark plasma sintering, double doping, thermoelectric properties, figure-of-merit
Subjects: Engineering
Materials Science
Depositing User: Dr. Rajpal Walke
Date Deposited: 21 Sep 2015 06:44
Last Modified: 21 Sep 2015 06:44

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