Chakraborty, B. R. and Shard, A. G. and Dalai, M. K. and Sehgal, G. (2014) Depth profiling of Irganox-3114 nanoscale delta layers in a matrix of Irganox-1010 using conventional Cs+ and O-2(+) ion beams. Surface and Interface Analysis, 46 (1). 36-41 . ISSN 0142-2421

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Depth profiling of an organic reference sample consisting of Irganox 3114 layers of 3nm thickness at depths of 51.5, 104.5, 207.6 and 310.7 nm inside a 412 nm thick Irganox 1010 matrix evaporated on a Si substrate has been studied using the conventional Cs+ and O-2(+) as sputter ion beams and Bi+ as the primary ion for analysis in a dual beam time-of-flight secondary ion mass spectrometer. The work is an extension of the Versailles Project on Advanced Materials and Standards project on depth profiling of organic multilayer materials. Cs+ ions were used at energies of 500eV, 1.0 keV and 2.0 keV and the O-2(+) ions were used at energies of 500 eV and 1.0 keV. All four Irganox 3114 layers were identified clearly in the depth profile using low mass secondary ions. The depth profile data were fitted to the empirical expression of Dowsett function and these fits are reported along with the full width at half maxima to represent the useful resolution for all the four delta layers detected. The data show that, of the conditions used in these experiments, an energy of 500eV for both Cs+ beam and O-2(+) beam provides the most useful depth profiles. The sputter yield volume per ion calculated from the slope of depth versus ion dose matches well with earlier reported data.

Item Type: Article
Additional Information: Copyright for this article belongs to M/S John Wiley and Sons.
Uncontrolled Keywords: depth profiling; Irganox; SIMS; s sputtering; O2 sputtering
Subjects: Chemistry
Depositing User: Dr. Rajpal Walke
Date Deposited: 21 Sep 2015 06:31
Last Modified: 21 Sep 2015 06:31

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