Kumar, Ashish and Kumar, Mukesh and Kaur, Riajeet and Joshi, Amish G. and Vinayak, Seema and Singh, R. (2014) Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme. Applied Physics Letters, 104 (13). ISSN 0003-6951

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Wet chemical passivation of n-GaN surface using Ru based solution has been reported. X-ray photoelectron spectroscopy characterization of the GaN surface revealed removal of surface oxides by the introduction of Ru complex species. Ni/n-GaN Schottky barrier diodes were fabricated on passivated GaN and a remarkable improvement in Schottky barrier height from 0.76eV to 0.92eV was observed.

Item Type: Article
Additional Information: Copyright for this article belongs to M/S AIP.
Subjects: Physics
Depositing User: Dr. Rajpal Walke
Date Deposited: 17 Sep 2015 05:39
Last Modified: 17 Sep 2015 05:39
URI: http://npl.csircentral.net/id/eprint/1186

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