Kumar, Ashish and Kumar, Mukesh and Kaur, Riajeet and Joshi, Amish G. and Vinayak, Seema and Singh, R. (2014) Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme. Applied Physics Letters, 104 (13). ISSN 0003-6951

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Abstract

Wet chemical passivation of n-GaN surface using Ru based solution has been reported. X-ray photoelectron spectroscopy characterization of the GaN surface revealed removal of surface oxides by the introduction of Ru complex species. Ni/n-GaN Schottky barrier diodes were fabricated on passivated GaN and a remarkable improvement in Schottky barrier height from 0.76eV to 0.92eV was observed.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/S AIP.
Subjects:	Physics
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	17 Sep 2015 05:39
Last Modified:	17 Sep 2015 05:39
URI:	http://npl.csircentral.net/id/eprint/1186

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