Prathap , P. and Dahiya , A. S. and Srivastava, M. and Srivastava, S. K. and Sivaiah, B. and Haranath, D. and Vandana, Dr. and Srivastava, Ritu and Rauthan, C. M. S. and Singh, P. K. (2014) Anti-reflection IN2O3 nanocones for silicon solar cells. Solar Energy, 106 (SI). pp. 102-108. ISSN 0038-092X

PDF - Published Version Restricted to Registered users only Download (1045Kb) | Request a copy

Abstract

In2O3 nanocones were synthesized on silicon substrates using thermal evaporation of In2O3 precursor powder followed by annealing in oxygen ambient. The morphology and aspect ratio of the nanocones strongly depend on the thermal budget during processing. The grown structures had tapered morphology as observed from microscopic analysis. The layers showed a minimum reflectance of similar to 3% over a wide range of spectrum from 300 nm to 1100 nm with a high transmittance of similar to 90%. The material has an energy band gap of 3.93 eV. X-ray diffraction analysis revealed that the annealed layers were crystallized in (222) plane. Moreover, these layers showed photoluminescence at 464 nm, 481 nm, 487 nm and 558 nm under the excitation wavelength of 325 nm. This frequency (photon) shifting towards more favourable wavelength regime is expected to improve the blue response of the solar cell device.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/S Elsevier.
Uncontrolled Keywords:	Anti-reflection; Nanocones; Silicon solar cells
Subjects:	Energy Fuels
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	11 Sep 2015 11:34
Last Modified:	11 Sep 2015 11:34
URI:	http://npl.csircentral.net/id/eprint/1173

Actions (login required)

View Item