Rastogi, A. and Kushwaha, A. K. and Shiyani, T. and Gangawar, A. and Budhani, R. C. (2010) Electrically Tunable Optical Switching of a Mott Insulator– Band Insulator Interface. Advanced Materials, 22 (40). pp. 4448-4451. ISSN 1521-4095

[img] PDF - Published Version
Restricted to Registered users only

Download (1577Kb) | Request a copy


We report on the optical switching behavior of ultrathin LaTiO 3 (LTO) fi lms epitaxially grown on (100) and (110) SrTiO 3 (STO).The metallic state of this heterostructure formed by deposition of an otherwise Mott insulator can be switched by an electric fi eld applied in a fi eld-effect transistor (FET) confi guration or upon exposure to near-ultraviolet light. The photon-fl ux-induced switching can be enhanced or nullifi ed by changing the polarity of the gate voltage. We present a scenario where electrons from the lower Hubbard band of LTO and oxygen defect states of STO accumulate at the interface. The extent of this accumulation is modifi ed by electric and photon fi elds, giving rise to a potentially new electronic device.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Uncontrolled Keywords: Photoeffects; Field effects; 2D electron gases; Optical switches; Thin films
Subjects: Chemistry
Materials Science
Depositing User: Ms Neetu Chandra
Date Deposited: 11 Apr 2012 11:37
Last Modified: 11 Apr 2012 11:37
URI: http://npl.csircentral.net/id/eprint/117

Actions (login required)

View Item View Item